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DMS3015SSS
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
0.1
±100
V
mA
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
-
-
-
-
1.5
8.5
9.5
18
0.45
2.5
11.9
14.9
-
0.55
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 11A
V GS = 4.5V, I D = 8.8A
V DS = 5V, I D = 10A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
0.3
-
-
-
-
-
-
-
-
1276
160
136
1.48
14.3
30.6
3.4
4.3
15.8
27.8
29.7
13.6
-
-
-
2.7
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 15V, V GS = 4.5V, I D = 8.8A
V DS = 15V, V GS = 10V, I D = 8.8A
V GS = 4.5V, V DS = 15V,
R G = 1.8 ? , I D =8.8A
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
30
30
25
V GS = 4. 5V
25
V DS = 5V
V GS = 4. 0V
20
V GS = 3.5V
V GS = 3.0V
20
15
10
V GS = 2.5V
15
10
T A = 150°C
5
5
T A = 125°C
T A = 85°C
T A = 25°C
0
0
V GS = 2.0V
0.5 1.0 1.5
2.0
0
0
T A = -55°C
1 2 3
4
V DS , DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMS3015SSS
Document number: DS32096 Rev. 4 - 2
2 of 6
www.diodes.com
September 2010
? Diodes Incorporated
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